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Optical Study of p-Doping in GaAs Nanowires for Low-Threshold and High-Yield Lasing

Alanis, Juan Arturo; Lysevych, Mykhaylo; Burgess, Timothy; Saxena, Dhruv; Mokkapati, Sudha; Skalsky, Stefan; Tang, Xiaoyan; Mitchell, Peter; Walton, Alex; Tan, Hark Hoe; Jagadish, Chennupati; Parkinson, Patrick


Semiconductor nanowires suffer from significant non-radiative surface recombination; however, heavy p-type doping has proven to be a viable option to increase the radiative recombination rate and, hence, quantum efficiency of emission, allowing the demonstration of room-temperature lasing. Using a large-scale optical technique, we have studied Zn-doped GaAs nanowires to understand and quantify the effect of doping on growth and lasing properties. We measure the non-radiative recombination rate...[Show more]

CollectionsANU Research Publications
Date published: 2018-12-07
Type: Journal article
Source: Nano Letters
DOI: 10.1021/acs.nanolett.8b04048


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