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Profiling As plasma doped Si/SiO2 with molecular ions

Trombini, Henrique; Alencar, Igor; Marmitt, G.G.; Fadanelli, Raul C.; Grande, P L; Vos, Maarten; England, J.

Description

Arsenic profiles in plasma doped silicon wafers were traced by scattering of H+ and H+2 ions at medium energies. Two wafers were doped with the same bias, gas pressure, total implanted dose and AsH3 concentration. After implantation, the wafers were submitted to industrial cleaning processes, resulting in the formation of a surface SiO2 layer, and one wafer was subjected to an additional thermal treatment. Scattering spectra of single and molecular ion beams with the same energy per nucleon and...[Show more]

dc.contributor.authorTrombini, Henrique
dc.contributor.authorAlencar, Igor
dc.contributor.authorMarmitt, G.G.
dc.contributor.authorFadanelli, Raul C.
dc.contributor.authorGrande, P L
dc.contributor.authorVos, Maarten
dc.contributor.authorEngland, J.
dc.date.accessioned2020-11-04T00:14:34Z
dc.identifier.issn0040-6090
dc.identifier.urihttp://hdl.handle.net/1885/213571
dc.description.abstractArsenic profiles in plasma doped silicon wafers were traced by scattering of H+ and H+2 ions at medium energies. Two wafers were doped with the same bias, gas pressure, total implanted dose and AsH3 concentration. After implantation, the wafers were submitted to industrial cleaning processes, resulting in the formation of a surface SiO2 layer, and one wafer was subjected to an additional thermal treatment. Scattering spectra of single and molecular ion beams with the same energy per nucleon and charge state differed only by the energy broadening due to the break-up of the molecule, allowing depth profiling by calculation of the dwell time before the backscattering collision. For the SiO2 layers of these samples a density reduction of, on average, 13% was observed, compared to thermally grown SiO2. In addition, the arsenic depth-profile determined were in close agreement with independent findings obtained by electron techniques.
dc.format.mimetypeapplication/pdf
dc.language.isoen_AU
dc.publisherElsevier
dc.rights© 2019 Elsevier B.V.
dc.sourceThin Solid Films
dc.titleProfiling As plasma doped Si/SiO2 with molecular ions
dc.typeJournal article
local.description.notesImported from ARIES
local.identifier.citationvolume692
dc.date.issued2019
local.identifier.absfor020404 - Electronic and Magnetic Properties of Condensed Matter; Superconductivity
local.identifier.ariespublicationu3102795xPUB5596
local.publisher.urlhttps://www.elsevier.com/en-au
local.type.statusPublished Version
local.contributor.affiliationTrombini, Henrique, Federal University of Rio Grande do Sul
local.contributor.affiliationAlencar, Igor, Universidade Federal de Santa Catarina
local.contributor.affiliationMarmitt, G.G., Instituto de Fisica da Universidade Federal do Rio Grande do Sul
local.contributor.affiliationFadanelli, Raul C., Universidade Federal do Rio Grande do Sul
local.contributor.affiliationGrande, P L , Instituto de Fisica da Universidade Federal do Rio Grande do Sul
local.contributor.affiliationVos, Maarten, College of Science, ANU
local.contributor.affiliationEngland, J., Varian Semiconductor Equipment
local.description.embargo2037-12-31
local.bibliographicCitation.startpage1
local.bibliographicCitation.lastpage6
local.identifier.doi10.1016/j.tsf.2019.137536
local.identifier.absseo970102 - Expanding Knowledge in the Physical Sciences
dc.date.updated2020-07-06T08:23:17Z
local.identifier.thomsonIDWOS:000499678700038
CollectionsANU Research Publications

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