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On the origin of dislocation generation and annihilation in α -Ga2O3 epilayers on sapphire

Ma, Tongchuan; Chen, Xuanhu; Kuang, Y.; Li, Li (Lily); Kremer, Felipe; Tan, Hark Hoe; Jagadish, Chennupati

Description

Epitaxial film quality is critical to the success of high-performance α-Ga2O3 vertical power devices. In this work, the origins of threading dislocation generation and annihilation in thick α-Ga2O3 films heteroepitaxially grown on sapphire by the mist-CVD technique have been examined by means of high-resolution X-ray diffraction and transmission electron microscopies. By increasing the nominal thickness, screw dislocations exhibit an independent characteristic with a low density of about 1.8 -...[Show more]

CollectionsANU Research Publications
Date published: 2019-10
Type: Journal article
URI: http://hdl.handle.net/1885/213286
Source: Applied Physics Letters
DOI: 10.1063/1.5120554
Access Rights: Open Access

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