Ma, Tongchuan; Chen, Xuanhu; Kuang, Y.; Li, Li (Lily); Kremer, Felipe; Tan, Hark Hoe; Jagadish, Chennupati
Epitaxial film quality is critical to the success of high-performance α-Ga2O3 vertical power devices. In this work, the origins of threading dislocation generation and annihilation in thick α-Ga2O3 films heteroepitaxially grown on sapphire by the mist-CVD technique have been examined by means of high-resolution X-ray diffraction and transmission electron microscopies. By increasing the nominal thickness, screw dislocations exhibit an independent characteristic with a low density of about 1.8 -...[Show more]
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