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Realization of p-type gallium nitride by magnesium ion implantation for vertical power devices

Shi, Ya-Ting; Ren, F. F.; Xu, Wei-Zong; Chen, Xuanhu; Ye, Jiandong; Li, Li (Lily); Zhou, Dong; Zhang, Rong; Zheng, Youdou; Tan, Hark Hoe; Jagadish, Chennupati; Lu, Hai


Implementing selective-area p-type doping through ion implantation is the most attractive choice for the fabrication of GaN-based bipolar power and related devices. However, the low activation efciency of magnesium (Mg) ions and the inevitable surface decomposition during high-temperature activation annealing process still limit the use of this technology for GaN-based devices. In this work, we demonstrate successful p-type doping of GaN using protective coatings during a Mg...[Show more]

CollectionsANU Research Publications
Date published: 2019
Type: Journal article
Source: Scientific Reports
DOI: 10.1038/s41598-019-45177-0
Access Rights: Open Access


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