Single Rare-Earth Ions as Atomic-Scale Probes in Ultrascaled Transistors
-
Altmetric Citations
Zhang, Qi; Hu, Guangchong; de Boo, Gabriele G.; Rančić, Miloš; Johnson, Brett; McCallum, Jeffrey C.; Du, Jiangfeng; Sellars, Matthew; Yin, Chunming; Rogge, Sven
Description
Continued scaling of semiconductor devices has driven information technology into vastly diverse applications. The performance of ultrascaled transistors is strongly influenced by local electric field and strain. As the size of these devices approaches fundamental limits, it is imperative to develop characterization techniques with nanometer resolution and three-dimensional (3D) mapping capabilities for device optimization. Here, we report on the use of single erbium (Er) ions as atomic probes...[Show more]
Collections | ANU Research Publications |
---|---|
Date published: | 2019 |
Type: | Journal article |
URI: | http://hdl.handle.net/1885/213178 |
Source: | Nano Letters |
DOI: | 10.1021/acs.nanolett.9b01281 |
Download
File | Description | Size | Format | Image |
---|---|---|---|---|
01_Zhang_Single_Rare-Earth_Ions_as_2019.pdf | 1.04 MB | Adobe PDF | Request a copy |
Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.
Updated: 17 November 2022/ Responsible Officer: University Librarian/ Page Contact: Library Systems & Web Coordinator