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Single Rare-Earth Ions as Atomic-Scale Probes in Ultrascaled Transistors

Zhang, Qi; Hu, Guangchong; de Boo, Gabriele G.; Rančić, Miloš; Johnson, Brett; McCallum, Jeffrey C.; Du, Jiangfeng; Sellars, Matthew; Yin, Chunming; Rogge, Sven

Description

Continued scaling of semiconductor devices has driven information technology into vastly diverse applications. The performance of ultrascaled transistors is strongly influenced by local electric field and strain. As the size of these devices approaches fundamental limits, it is imperative to develop characterization techniques with nanometer resolution and three-dimensional (3D) mapping capabilities for device optimization. Here, we report on the use of single erbium (Er) ions as atomic probes...[Show more]

CollectionsANU Research Publications
Date published: 2019
Type: Journal article
URI: http://hdl.handle.net/1885/213178
Source: Nano Letters
DOI: 10.1021/acs.nanolett.9b01281

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