Characterization of nanocrystalline nitrogen-containing titanium oxide obtained by N 2 /O 2 /Ar low-field helicon plasma sputtering
TiO2 and nitrogen-containing TiO2 thin films were deposited on glass and silicon wafer substrates using a helicon-assisted reactive plasma sputtering process in a gas mixture of Ar/O2/N2. The growth mechanism, chemical composition and crystalline structure were probed by x-ray photoelectron spectroscopy, x-ray diffraction, Raman spectroscopy, scanning and transmission electron microscopy. The presence of nitrogen in the film induces the formation of some Ti3+ defects states, which introduces...[Show more]
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|Source:||Journal of Physics D: Applied Physics|
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