General Semiconductor Junction Relations
General carrier density relations are derived for the case of an abrupt junction between two sections of semiconductor with arbitrary impurity contents and with an arbitrary applied bias. These relations reduce to those of Shockley at very low bias Levels, but in addition take account of all types of conductivity modulation effects.
|Collections||ANU Research Publications|
|Source:||Journal of Electronics and Control|
|Fletcher1957b.pdf||119.31 kB||Adobe PDF|
Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.