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General Semiconductor Junction Relations

Fletcher, Neville H.


General carrier density relations are derived for the case of an abrupt junction between two sections of semiconductor with arbitrary impurity contents and with an arbitrary applied bias. These relations reduce to those of Shockley at very low bias Levels, but in addition take account of all types of conductivity modulation effects.

CollectionsANU Research Publications
Date published: 1957
Type: Journal article
Source: Journal of Electronics and Control
DOI: 10.1080/00207215708937064


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