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Terahertz Emission and Lifetime Measurements of Ion-implanted Semiconductors: Experiment and Simulation

Lloyd-Hughes, J; Castro-Camus, E; Fraser, Michael; Jagadish, Chennupati; Johnston, Michael B; Tan, Hark Hoe


The spectral width of terahertz emission from ion-implanted terahertz emitters increases with ion damage, owing to ultrafast carrier capture. Carrier dynamics simulations reinforce these findings. Optical-pump, terahertz-probe experiments confirm the subpicosecond lifetimes of these materials.

CollectionsANU Research Publications
Date published: 2006
Type: Conference paper
Source: Conference on Lasers and Electro-Optics Quantum Electronics and Laser Science: Conference on Photonic Applications, Systems and Technologies: Technical Digest CD-ROM
DOI: 10.1109/CLEO.2006.4628606


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