Quantifying Quasi-Fermi Level Splitting and Mapping its Heterogeneity in Atomically Thin Transition Metal Dichalcogenides
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Tebyetekerwa, Mike; Zhang, Jian (Andrew); Liang, Kun; Duong, The; Neupane, Guru; Zhang, Linglong; Liu, Boqing; Truong, Thien; Basnet, Rabin; Qiao, Xiaojing; Yin, Zongyou; Lu, Yuerui; Macdonald, Daniel; Nguyen, Hieu
Description
One of the most fundamental parameters of any photovoltaic material is its quasi‐Fermi level splitting (∆µ) under illumination. This quantity represents the maximum open‐circuit voltage (Voc) that a solar cell fabricated from that material can achieve. Herein, a contactless, nondestructive method to quantify this parameter for atomically thin 2D transition metal dichalcogenides (TMDs) is reported. The technique is applied to quantify the upper limits of Voc that can possibly be achieved from...[Show more]
Collections | ANU Research Publications |
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Date published: | 2019 |
Type: | Journal article |
URI: | http://hdl.handle.net/1885/210517 |
Source: | Advanced Materials |
DOI: | 10.1002/adma.201900522 |
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01_Tebyetekerwa_Quantifying_Quasi-Fermi_Level_2019.pdf | 3.77 MB | Adobe PDF | Request a copy |
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