Two-colour mid-infrared absorption in an InAs/GaSb-based type II and broken-gap quantum well
We examine theoretically the contribution from different transition channels to optical absorption in an InAs/GaSb-based type II and broken-gap quantum well in which both electron and hole subbands in different layers are occupied by carriers. We find that in such a system, due to a weak overlap of the electron and hole wavefunction at the interface, optical absorption is mainly achieved via inter-subband transition within the same material layer. As a result, two sharp absorption peaks can be...[Show more]
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|Source:||Journal of Physics: Condensed Matter|
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