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Rear Passivation and Point Contacts Formation by Laser Process through Stacks of a-Si:H(i) and a-Si:B/Sb for High Efficiency Silicon Solar Cell

Han, Young; Franklin, Evan; Zhang, Xinyu; Thomson, Andrew; Ernst, Marco

Description

In this work we investigate the effectiveness of deposited, boron- (for p-type) or antimony-doped (for n-type), amorphous silicon (a-Si:B/Sb) layers for producing multi-purpose films capable of providing both excellent surface passivation and effective localized doping via laser irradiation. We deposit, via sputtering or via a combination of PECVD and sputtering, layers of a-Si:B/Sb or stacks of a-Si:H(i) and a-Si:B/Sb on crystalline silicon substrates, and subsequently employ a KrF 248 nm...[Show more]

dc.contributor.authorHan, Young
dc.contributor.authorFranklin, Evan
dc.contributor.authorZhang, Xinyu
dc.contributor.authorThomson, Andrew
dc.contributor.authorErnst, Marco
dc.coverage.spatialMunich, Germany
dc.date.accessioned2020-07-08T03:47:08Z
dc.date.createdJune 21-24 2016
dc.identifier.isbn3936338418
dc.identifier.issn2196-100X
dc.identifier.urihttp://hdl.handle.net/1885/205937
dc.description.abstractIn this work we investigate the effectiveness of deposited, boron- (for p-type) or antimony-doped (for n-type), amorphous silicon (a-Si:B/Sb) layers for producing multi-purpose films capable of providing both excellent surface passivation and effective localized doping via laser irradiation. We deposit, via sputtering or via a combination of PECVD and sputtering, layers of a-Si:B/Sb or stacks of a-Si:H(i) and a-Si:B/Sb on crystalline silicon substrates, and subsequently employ a KrF 248 nm nanosecond laser to simultaneously remove the film and dope the sub-surface region beneath the film. Sheet resistance measurements indicate that a high level of doping is achieved in laser processed regions for quite a broad range of laser parameters and dopant fractions in deposited films, with sheet resistance as low as around 10 Ω/□ being observed. Furthermore, we evaluate and investigate the passivation capabilities of the films in non-laser processed regions and also determine the recombination properties of the locally laser doped ‘contact’ regions, thus providing an indication of the efficiency potential of PERL type cells utilising these multi-purpose films with laser-doped local contacts.
dc.format.mimetypeapplication/pdf
dc.language.isoen_AU
dc.publisherWIP Wirtschaft und Infrastuktur GmbH & Co Planungs KG
dc.relation.ispartofseries32nd European Photovoltaic Solar Energy Conference and Exhibition EU PVSEC 2016
dc.rights© 2016
dc.sourceProceedings of the 32nd European Photovoltaic Solar Energy Conference
dc.source.urihttps://www.eupvsec-proceedings.com/proceedings?paper=37776
dc.titleRear Passivation and Point Contacts Formation by Laser Process through Stacks of a-Si:H(i) and a-Si:B/Sb for High Efficiency Silicon Solar Cell
dc.typeConference paper
local.description.notesImported from ARIES
local.description.refereedYes
dc.date.issued2016
local.identifier.absfor091204 - Elemental Semiconductors
local.identifier.absfor090605 - Photodetectors, Optical Sensors and Solar Cells
local.identifier.ariespublicationu5357342xPUB101
local.publisher.urlwww.eupvsec-proceedings.com
local.type.statusPublished Version
local.contributor.affiliationHan, Young, College of Engineering and Computer Science, ANU
local.contributor.affiliationFranklin, Evan, College of Engineering and Computer Science, ANU
local.contributor.affiliationZhang, Xinyu, College of Engineering and Computer Science, ANU
local.contributor.affiliationThomson, Andrew, College of Engineering and Computer Science, ANU
local.contributor.affiliationErnst, Marco, College of Engineering and Computer Science, ANU
local.description.embargo2037-12-31
local.bibliographicCitation.startpage621
local.bibliographicCitation.lastpage624
local.identifier.doi10.4229/EUPVSEC20162016-2AV.1.17
local.identifier.absseo850504 - Solar-Photovoltaic Energy
dc.date.updated2020-03-08T07:21:47Z
CollectionsANU Research Publications

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