Rear Passivation and Point Contacts Formation by Laser Process through Stacks of a-Si:H(i) and a-Si:B/Sb for High Efficiency Silicon Solar Cell
In this work we investigate the effectiveness of deposited, boron- (for p-type) or antimony-doped (for n-type), amorphous silicon (a-Si:B/Sb) layers for producing multi-purpose films capable of providing both excellent surface passivation and effective localized doping via laser irradiation. We deposit, via sputtering or via a combination of PECVD and sputtering, layers of a-Si:B/Sb or stacks of a-Si:H(i) and a-Si:B/Sb on crystalline silicon substrates, and subsequently employ a KrF 248 nm...[Show more]
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|Source:||Proceedings of the 32nd European Photovoltaic Solar Energy Conference|
|01_Han_Rear_Passivation_and_Point_2016.pdf||360.3 kB||Adobe PDF||Request a copy|
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