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Comparison of stress in single and multiple layer depositions of plasma-deposited amorphous silicon dioxide

Au, Vicky; Charles, Christine; Boswell, Roderick


The stress in a single-layer continuous deposition of amorphous silicon dioxide (SiO2) film is compared with the stress within multiple-layer intermittent or 'stop-start' depositions. The films were deposited by helicon activated reactive evaporation (plasma assisted deposition with electron beam evaporation source) to a 1 νm total film thickness. The relationships for stress as a function of film thickness for single, two, four and eight layer depositions have been obtained by employing the...[Show more]

CollectionsANU Research Publications
Date published: 2006
Type: Journal article
Source: Journal of Physics D: Applied Physics
DOI: 10.1088/0022-3727/39/1/024


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