Comparison of stress in single and multiple layer depositions of plasma-deposited amorphous silicon dioxide
The stress in a single-layer continuous deposition of amorphous silicon dioxide (SiO2) film is compared with the stress within multiple-layer intermittent or 'stop-start' depositions. The films were deposited by helicon activated reactive evaporation (plasma assisted deposition with electron beam evaporation source) to a 1 νm total film thickness. The relationships for stress as a function of film thickness for single, two, four and eight layer depositions have been obtained by employing the...[Show more]
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|Source:||Journal of Physics D: Applied Physics|
|01_Au_Comparison_of_stress_in_single_2006.pdf||145.82 kB||Adobe PDF||Request a copy|
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