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Band alignment and band bending at a-Ga2O3/ZnO n-n isotype hetero-interface

Chen, Xuanhu; Chen, Y. T.; Ren, F. F.; Gu, Shulin; Tan, Hark Hoe; Jagadish, Chennupati; Ye, Jiandong


Understanding the electronic structures at the interfaces of wide bandgap oxide heterostructures is crucial for the rational design of oxidebased optoelectronic devices with novel functionality and improved performance. In this work, the electronic band diagram at a ZnO/ a-Ga2O3 n-n isotype heterojunction is investigated by depth-profile x-ray photoemission spectroscopy (XPS). The directly measured valence-band offset is 0.61 6 0.1 eV and a type-I (straddling gap) band alignment is formed at...[Show more]

CollectionsANU Research Publications
Date published: 2019-11-11
Type: Journal article
Source: Applied Physics Letters
DOI: 10.1063/1.5126325
Access Rights: Open Access


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