Band alignment and band bending at a-Ga2O3/ZnO n-n isotype hetero-interface
Understanding the electronic structures at the interfaces of wide bandgap oxide heterostructures is crucial for the rational design of oxidebased optoelectronic devices with novel functionality and improved performance. In this work, the electronic band diagram at a ZnO/ a-Ga2O3 n-n isotype heterojunction is investigated by depth-profile x-ray photoemission spectroscopy (XPS). The directly measured valence-band offset is 0.61 6 0.1 eV and a type-I (straddling gap) band alignment is formed at...[Show more]
|Collections||ANU Research Publications|
|Source:||Applied Physics Letters|
|Access Rights:||Open Access|
|01_Chen_Band_alignment_and_band_2019.pdf||2.62 MB||Adobe PDF|
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