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Wavelength-tunable InAsP quantum dots in InP nanowires

Zhong, Zhiqin; Li, Xinlei; Wu, Jiang; Li, Cheng; Xie, Ruo Bing; Yuan, Xiaoming; Niu, Xiaobin; Wang, Wenhao; Luo, Xiaorong; Zhang, Guojun; Wang, Zhiming; Tan, Hark Hoe; Jagadish, Chennupati

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There is considerable interest in quantum dots incorporated in nanowires for nanolasers and quantum emitters. In this letter, we demonstrate single InAsP quantum dots embedded in InP nanowires grown by metalorganic vapor-phase epitaxy. Despite the abrupt change of growth conditions at the interface, InAsP quantum dots can be grown in pure wurtzite InP nanowires. We develop a model and analyze the effects of the thickness of InAsP quantum dots and the composition of As on the formation of...[Show more]

dc.contributor.authorZhong, Zhiqin
dc.contributor.authorLi, Xinlei
dc.contributor.authorWu, Jiang
dc.contributor.authorLi, Cheng
dc.contributor.authorXie, Ruo Bing
dc.contributor.authorYuan, Xiaoming
dc.contributor.authorNiu, Xiaobin
dc.contributor.authorWang, Wenhao
dc.contributor.authorLuo, Xiaorong
dc.contributor.authorZhang, Guojun
dc.contributor.authorWang, Zhiming
dc.contributor.authorTan, Hark Hoe
dc.contributor.authorJagadish, Chennupati
dc.date.accessioned2020-06-30T23:43:57Z
dc.identifier.issn0003-6951
dc.identifier.urihttp://hdl.handle.net/1885/205672
dc.description.abstractThere is considerable interest in quantum dots incorporated in nanowires for nanolasers and quantum emitters. In this letter, we demonstrate single InAsP quantum dots embedded in InP nanowires grown by metalorganic vapor-phase epitaxy. Despite the abrupt change of growth conditions at the interface, InAsP quantum dots can be grown in pure wurtzite InP nanowires. We develop a model and analyze the effects of the thickness of InAsP quantum dots and the composition of As on the formation of dislocations. Furthermore, the InAsP/InP quantum dot nanowires show bright photoluminescence up to room temperature without any surface passivation. The emission from the quantum dots could be well tuned by adjusting the dot size either vertically or laterally. The study demonstrates the potential of this material system for optoelectronic applications.
dc.description.sponsorshipThe authors are grateful to P. Caroff-Gaonac’h for technical growth of InAsP/InP NWQDs. The authors acknowledge the financial support from the Australian Research Council (ARC), National Natural Science Foundation of China (Grant No. 11305029), Natural Science Foundation of Guangdong Province (Grants Nos. 2017A030313389 and 2018A030313125), Fundamental Research Funds for the Central Universities (Grant No. ZYGX2016J054), National Basic Research Program (973) of China through Grant No. 2015CB358600, and Australian National Fabrication Facility (ANFF) ACT node for facility support.
dc.format.mimetypeapplication/pdf
dc.language.isoen_AU
dc.publisherAmerican Institute of Physics (AIP)
dc.rights© 2019 Author(s).
dc.sourceApplied Physics Letters
dc.titleWavelength-tunable InAsP quantum dots in InP nanowires
dc.typeJournal article
local.description.notesImported from ARIES
local.identifier.citationvolume115
dc.date.issued2019-07-29
local.identifier.absfor020504 - Photonics, Optoelectronics and Optical Communications
local.identifier.absfor100706 - Nanofabrication, Growth and Self Assembly
local.identifier.absfor091203 - Compound Semiconductors
local.identifier.ariespublicationu3102795xPUB4237
local.publisher.urlhttps://www.aip.org/
local.type.statusPublished Version
local.contributor.affiliationZhong, Zhiqin, University of Electronic Science and Technology of China
local.contributor.affiliationLi, Xinlei, South China Normal University
local.contributor.affiliationWu, Jiang, University of Electronic Science and Technology of China
local.contributor.affiliationLi, Cheng, Chinese Academy of Sciences
local.contributor.affiliationXie, Ruo Bing, Chinese Academy of Sciences
local.contributor.affiliationYuan, Xiaoming, College of Science, ANU
local.contributor.affiliationNiu, Xiaobin, University of Electronic Science and Technology of China
local.contributor.affiliationWang, Wenhao, University of Electronic Science and Technology of China
local.contributor.affiliationLuo, Xiaorong, University of Electronic Science and Technology of China
local.contributor.affiliationZhang, Guojun, University of Electronic Science and Technology of China
local.contributor.affiliationWang, Zhiming, University of Electronic Science and Technology of China
local.contributor.affiliationTan, Hoe Hark, College of Science, ANU
local.contributor.affiliationJagadish, Chennupati, College of Science, ANU
local.description.embargo2020-07-29
local.bibliographicCitation.issue5
local.bibliographicCitation.startpage1
local.bibliographicCitation.lastpage5
local.identifier.doi10.1063/1.5095675
local.identifier.absseo970102 - Expanding Knowledge in the Physical Sciences
local.identifier.absseo970110 - Expanding Knowledge in Technology
dc.date.updated2020-01-27T16:09:50Z
local.identifier.scopusID2-s2.0-85070096023
dcterms.accessRightsOpen Access
dc.provenancehttp://sherpa.ac.uk/romeo/issn/0003-6951/..."author can archive publisher's version/PDF" from SHERPA/RoMEO site (as at 01/07/2020).
CollectionsANU Research Publications

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