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Nanosails Showcasing Zn3As2 as an Optoelectronic-Grade Earth Abundant Semiconductor

Stutz, Elias Z.; Friedl, Martin; Burgess, Timothy; Tan, Hark Hoe; Caroff, Philippe; Jagadish, Chennupati; Fontcuberta i Morral, Anna

Description

Zn3As2 is a promising earth‐abundant semiconductor material. Its bandgap, around 1 eV, can be tuned across the infrared by alloying and makes this material suited for applications in optoelectronics. Here, we report the crystalline structure and electrical properties of strain‐free Zn3As2 nanosails, grown by metal‐organic vapor phase epitaxy. We demonstrate that the crystalline structure is consistent with the P42/nmc ( 𝐷154h ) α”‐Zn3As2 metastable phase. Temperature‐dependent Hall effect...[Show more]

dc.contributor.authorStutz, Elias Z.
dc.contributor.authorFriedl, Martin
dc.contributor.authorBurgess, Timothy
dc.contributor.authorTan, Hark Hoe
dc.contributor.authorCaroff, Philippe
dc.contributor.authorJagadish, Chennupati
dc.contributor.authorFontcuberta i Morral, Anna
dc.date.accessioned2020-06-30T23:36:52Z
dc.identifier.issn1862-6254
dc.identifier.urihttp://hdl.handle.net/1885/205671
dc.description.abstractZn3As2 is a promising earth‐abundant semiconductor material. Its bandgap, around 1 eV, can be tuned across the infrared by alloying and makes this material suited for applications in optoelectronics. Here, we report the crystalline structure and electrical properties of strain‐free Zn3As2 nanosails, grown by metal‐organic vapor phase epitaxy. We demonstrate that the crystalline structure is consistent with the P42/nmc ( 𝐷154h ) α”‐Zn3As2 metastable phase. Temperature‐dependent Hall effect measurements indicate that the material is degenerately p‐doped with a hole mobility close to 103 cm2 V−1 s−1. Our results display the potential of Zn3As2 nanostructures for next generation energy harvesting and optoelectronic devices.
dc.description.sponsorshipSNSF QSIT Easeh. Grant Number: BSCGI0_157705
dc.format.mimetypeapplication/pdf
dc.language.isoen_AU
dc.publisherWiley-VCH Verlag GMBH
dc.rights© 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
dc.sourcePhysica Status Solidi: Rapid Research Letters
dc.subjectII–V compounds
dc.subjectdegenerate semiconductors
dc.subjectearth abundant materials
dc.subjectHall effect
dc.subjectnanosails
dc.subjectoptoelectronics
dc.subjectzinc arsenide
dc.titleNanosails Showcasing Zn3As2 as an Optoelectronic-Grade Earth Abundant Semiconductor
dc.typeJournal article
local.description.notesImported from ARIES
local.identifier.citationvolume13
dc.date.issued2019-03-26
local.identifier.absfor020404 - Electronic and Magnetic Properties of Condensed Matter; Superconductivity
local.identifier.absfor090604 - Microelectronics and Integrated Circuits
local.identifier.absfor091203 - Compound Semiconductors
local.identifier.ariespublicationu3102795xPUB4082
local.publisher.urlhttps://onlinelibrary.wiley.com/
local.type.statusPublished Version
local.contributor.affiliationStutz, Elias Z., Ecole polytechnique federale de Lausanne (EPFL)
local.contributor.affiliationFriedl, Martin, Ecole polytechnique federale de Lausanne (EPFL)
local.contributor.affiliationBurgess, Timothy, College of Science, ANU
local.contributor.affiliationTan, Hoe Hark, College of Science, ANU
local.contributor.affiliationCaroff, Philippe, College of Science, ANU
local.contributor.affiliationJagadish, Chennupati, College of Science, ANU
local.contributor.affiliationFontcuberta i Morral, Anna, Ecole Polytechnique Federale de Lausanne
local.description.embargo2037-12-31
local.bibliographicCitation.issue7
local.bibliographicCitation.startpage1
local.bibliographicCitation.lastpage5
local.identifier.doi10.1002/pssr.201900084
local.identifier.absseo970102 - Expanding Knowledge in the Physical Sciences
local.identifier.absseo970110 - Expanding Knowledge in Technology
local.identifier.absseo861603 - Integrated Circuits and Devices
dc.date.updated2020-01-27T16:09:47Z
local.identifier.scopusID2-s2.0-85063383237
CollectionsANU Research Publications

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