Skip navigation
Skip navigation

Nanosails Showcasing Zn3As2 as an Optoelectronic-Grade Earth Abundant Semiconductor

Stutz, Elias Z.; Friedl, Martin; Burgess, Timothy; Tan, Hark Hoe; Caroff, Philippe; Jagadish, Chennupati; Fontcuberta i Morral, Anna


Zn3As2 is a promising earth‐abundant semiconductor material. Its bandgap, around 1 eV, can be tuned across the infrared by alloying and makes this material suited for applications in optoelectronics. Here, we report the crystalline structure and electrical properties of strain‐free Zn3As2 nanosails, grown by metal‐organic vapor phase epitaxy. We demonstrate that the crystalline structure is consistent with the P42/nmc ( 𝐷154h ) α”‐Zn3As2 metastable phase. Temperature‐dependent Hall effect...[Show more]

CollectionsANU Research Publications
Date published: 2019-03-26
Type: Journal article
Source: Physica Status Solidi: Rapid Research Letters
DOI: 10.1002/pssr.201900084


File Description SizeFormat Image
01_Stutz_Nanosails_Showcasing_Zn3As2_as_2019.pdf1.12 MBAdobe PDF    Request a copy

Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.

Updated:  19 May 2020/ Responsible Officer:  University Librarian/ Page Contact:  Library Systems & Web Coordinator