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Magnetic-field-dependent quantum emission in hexagonal boron nitride at room temperature

Exarhos, Annemarie L.; Hopper, David A.; Patel, Raj N.; Doherty, Marcus; Bassett, Lee C.

Description

Optically addressable spins associated with defects in wide-bandgap semiconductors are versatile platforms for quantum information processing and nanoscale sensing, where spin-dependent inter-system crossing transitions facilitate optical spin initialization and readout. Recently, the van der Waals material hexagonal boron nitride (h-BN) has emerged as a robust host for quantum emitters, promising efficient photon extraction and atom-scale engineering, but observations of spin-related effects...[Show more]

dc.contributor.authorExarhos, Annemarie L.
dc.contributor.authorHopper, David A.
dc.contributor.authorPatel, Raj N.
dc.contributor.authorDoherty, Marcus
dc.contributor.authorBassett, Lee C.
dc.date.accessioned2020-06-30T03:59:48Z
dc.date.available2020-06-30T03:59:48Z
dc.identifier.issn2041-1723
dc.identifier.urihttp://hdl.handle.net/1885/205660
dc.description.abstractOptically addressable spins associated with defects in wide-bandgap semiconductors are versatile platforms for quantum information processing and nanoscale sensing, where spin-dependent inter-system crossing transitions facilitate optical spin initialization and readout. Recently, the van der Waals material hexagonal boron nitride (h-BN) has emerged as a robust host for quantum emitters, promising efficient photon extraction and atom-scale engineering, but observations of spin-related effects have remained thus far elusive. Here, we report room-temperature observations of strongly anisotropic photoluminescence patterns as a function of applied magnetic field for select quantum emitters in h-BN. Field-dependent variations in the steady-state photoluminescence and photon emission statistics are consistent with an electronic model featuring a spin-dependent inter-system crossing between triplet and singlet manifolds, indicating that optically-addressable spin defects are present in h-BN.
dc.description.sponsorshipThis work was supported by the Army Research Office (W911NF-15-1-0589). M.W.D. was supported by the Australian Research Council (DE170100169). The authors gratefully acknowledge use of facilities and instrumentation supported by the NSF through the University of Pennsylvania Materials Research Science and Engineering Center (MRSEC) (DMR-1720530). This work was carried out in part at the Singh Center for Nanotechnology, which is supported by the NSF National Nanotechnology Coordinated Infrastructure Program (NNCI-1542153).
dc.format.extent8 pages
dc.format.mimetypeapplication/pdf
dc.language.isoen_AU
dc.publisherNature Research (part of Springer Nature)
dc.rights© The Author(s) 2019
dc.rights.urihttp://creativecommons.org/ licenses/by/4.0/
dc.sourceNature Communications
dc.subjectMagnetic properties and materials, Qubits, Single photons and quantum effects, Two-dimensional materials
dc.titleMagnetic-field-dependent quantum emission in hexagonal boron nitride at room temperature
dc.typeJournal article
local.description.notesImported from ARIES
local.identifier.citationvolume10
dcterms.dateAccepted2018-12-17
dc.date.issued2019-01-15
local.identifier.absfor020603 - Quantum Information, Computation and Communication
local.identifier.absfor100710 - Nanometrology
local.identifier.ariespublicationu3102795xPUB2296
local.publisher.urlhttps://www.nature.com/
local.type.statusPublished Version
local.contributor.affiliationExarhos, Annemarie L., University of Pennsylvania
local.contributor.affiliationHopper, David A., University of Pennsylvania
local.contributor.affiliationPatel, Raj N., University of Pennsylvania
local.contributor.affiliationDoherty, Marcus, College of Science, The Australian National University
local.contributor.affiliationBassett, Lee C., University of Pennsylvania
dc.relationhttp://purl.org/au-research/grants/arc/DE170100169
local.identifier.essn2041-1723
local.bibliographicCitation.issue222
local.bibliographicCitation.startpage222
local.bibliographicCitation.lastpage8
local.identifier.doi10.1038/s41467-018-08185-8
local.identifier.absseo970102 - Expanding Knowledge in the Physical Sciences
local.identifier.absseo970110 - Expanding Knowledge in Technology
dc.date.updated2020-07-06T08:21:01Z
local.identifier.thomsonID4.55597E+11
dcterms.accessRightsOpen Access
dc.rights.licenseThis article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/ licenses/by/4.0/
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