InGaAsP as a Promising Narrow Band Gap Semiconductor for Photoelectrochemical Water Splitting
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Butson, Joshua; Narangari, Parvathala Reddy; Lysevych, Mykhaylo; Wong-Leung, Jennifer; Wan, Yimao; Karuturi, Siva Krishna; Tan, Hark Hoe; Jagadish, Chennupati
Description
While photoelectrochemical (PEC) water splitting is a very promising route toward zero-carbon energy, conversion efficiency remains limited. Semiconductors with narrower band gaps can absorb a much greater portion of the solar spectrum, thereby increasing efficiency. However, narrow band gap (∼1 eV) III−V semiconductor photoelectrodes have not yet been thoroughly investigated. In this study, the narrow band gap quaternary III−V alloy InGaAsP is demonstrated for the first time to have...[Show more]
Collections | ANU Research Publications |
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Date published: | 2019 |
Type: | Journal article |
URI: | http://hdl.handle.net/1885/205319 |
Source: | ACS Applied Materials and Interfaces |
DOI: | 10.1021/acsami.9b06656 |
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01_Butson_InGaAsP_as_a_Promising_Narrow_2019.pdf | 2.42 MB | Adobe PDF | Request a copy |
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