Twin-Free Uniform Epitaxial GaAs Nanowires Grown by a Two-Temperature Process
We demonstrate vertically aligned epitaxial GaAs nanowires of excellent cristallographic quality and optimal shape, grown by Au nanoparticle-catalyzed metalorganic chemical vapor deposition. This is achieved by a two-temperature growth procedure, consisting of a brief initial high-temperature growth step followed by prolonged growth at a lower temperature. The initial high-temperature step is essential for obtaining straight, vertically aligned epitaxial nanowires on the (111)B GaAs substrate....[Show more]
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