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Twin-Free Uniform Epitaxial GaAs Nanowires Grown by a Two-Temperature Process

Joyce, Hannah J; Gao, Qiang; Jagadish, Chennupati; Kim, Yong; Zhang, Xin; Guo, YaNan; Zou, Jin; Tan, Hark Hoe


We demonstrate vertically aligned epitaxial GaAs nanowires of excellent cristallographic quality and optimal shape, grown by Au nanoparticle-catalyzed metalorganic chemical vapor deposition. This is achieved by a two-temperature growth procedure, consisting of a brief initial high-temperature growth step followed by prolonged growth at a lower temperature. The initial high-temperature step is essential for obtaining straight, vertically aligned epitaxial nanowires on the (111)B GaAs substrate....[Show more]

CollectionsANU Research Publications
Date published: 2007
Type: Journal article
Source: Nano Letters
DOI: 10.1021/nl062755v


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