Ring defects in n-type Czochralski-grown silicon: A high spatial resolution study using Fourier-transform infrared spectroscopy, micro-photoluminescence, and micro-Raman
We investigated ring defects induced by a two-step anneal in n-type Czochralski-grown silicon wafers using a combination of high spatial resolution Fourier Transform Infrared Spectroscopy (FTIR), micro-photoluminescence (PL) mapping, and micro-Raman mapping. Through FTIR measurements, we show the inhomogeneous loss in interstitial oxygen with a positive correlation with the inverse lifetime. Using high-resolution micro-PL mapping, we are able to distinguish individual recombination-active...[Show more]
|Collections||ANU Research Publications|
|Source:||Journal of Applied Physics|
|Access Rights:||Open Access|
|01_Basnet_Ring_defects_in_n-type_2018.pdf||2 MB||Adobe PDF|
Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.