Atomic localization of quantum emitters in multilayer hexagonal boron nitride
The recent discovery of single-photon emitting defects hosted by the two-dimensional wide band gap semiconductor hexagonal boron nitride (hBN) has inspired a great number of experiments. Key characteristics of these quantum emitters are their capability to operate at room temperature with a high luminosity. In spite of large theoretical and experimental research efforts, the exact nature of the emission remains unresolved. In this work we utilize layer-by-layer etching of multilayer hBN to...[Show more]
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