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Influence of SiO2 and TiO2 dielectric layers on the atomic intermixing of InxGa1-xAs/InP quantum well structures

CollectionsANU Research Publications
Date published: 2007
Type: Journal article
URI: http://hdl.handle.net/1885/20268
Source: Semiconductor Science and Technology
DOI: 10.1088/0268-1242/22/9/002

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