Skip navigation
Skip navigation

Low-cost, large-scale, and facile production of Si nanowires exhibiting enhanced third-order optical nonlinearity

Huang, Zhipeng; Wang, R; Jia, Ding; Maoying, Li; Zhang, Chi; Humphrey, Mark

Description

A facile method for the low-cost and large-scale production of silicon nanowires has been developed. Silicon powders were subjected to sequential metal plating and metal-assisted chemical etching, resulting in well-defined silicon nanowires. The morphology and structure of the silicon nanowires were investigated, revealing that single-crystal silicon nanowires with average diameters of 79 ± 35 nm and length more than 10 μm can be fabricated. The silicon nanowires show excellent third-order...[Show more]

dc.contributor.authorHuang, Zhipeng
dc.contributor.authorWang, R
dc.contributor.authorJia, Ding
dc.contributor.authorMaoying, Li
dc.contributor.authorZhang, Chi
dc.contributor.authorHumphrey, Mark
dc.date.accessioned2015-12-07T22:21:50Z
dc.identifier.issn0002-7863
dc.identifier.urihttp://hdl.handle.net/1885/20230
dc.description.abstractA facile method for the low-cost and large-scale production of silicon nanowires has been developed. Silicon powders were subjected to sequential metal plating and metal-assisted chemical etching, resulting in well-defined silicon nanowires. The morphology and structure of the silicon nanowires were investigated, revealing that single-crystal silicon nanowires with average diameters of 79 ± 35 nm and length more than 10 μm can be fabricated. The silicon nanowires show excellent third-order nonlinear optical properties, with a third-order susceptibility much larger than that of bulk silicon, porous silicon, and silicon nanocrystals embedded in SiO 2.
dc.publisherAmerican Chemical Society
dc.sourceJournal of the American Chemical Society
dc.subjectKeywords: Average diameter; Bulk silicon; Facile method; Facile production; Large-scale production; Metal-assisted chemical etching; Si nanowire; Silicon nanocrystals; Silicon nanowires; Silicon powders; Single crystal silicon; Third order nonlinear optical propert etching; nonlinear optics; silicon nanowire; synthesis
dc.titleLow-cost, large-scale, and facile production of Si nanowires exhibiting enhanced third-order optical nonlinearity
dc.typeJournal article
local.description.notesImported from ARIES
local.identifier.citationvolume4
dc.date.issued2012
local.identifier.absfor039904 - Organometallic Chemistry
local.identifier.ariespublicationu5072968xPUB11
local.type.statusPublished Version
local.contributor.affiliationHuang, Zhipeng, Jiangsu University
local.contributor.affiliationWang, R, Zhejiang University
local.contributor.affiliationJia, Ding, Jiangsu University
local.contributor.affiliationMaoying, Li, Scientific Research Academy,Jiangsu University
local.contributor.affiliationHumphrey, Mark, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationZhang, Chi, Jiangsu University
local.description.embargo2037-12-31
local.bibliographicCitation.issue3
local.bibliographicCitation.startpage1553
local.bibliographicCitation.lastpage1559
local.identifier.doi10.1021/am201758z
local.identifier.absseo970103 - Expanding Knowledge in the Chemical Sciences
dc.date.updated2016-02-24T11:34:00Z
local.identifier.scopusID2-s2.0-84859143951
local.identifier.thomsonID000301968400056
CollectionsANU Research Publications

Download

File Description SizeFormat Image
01_Huang_Low-cost,_large-scale,_and_2012.pdf2.67 MBAdobe PDF    Request a copy


Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.

Updated:  19 May 2020/ Responsible Officer:  University Librarian/ Page Contact:  Library Systems & Web Coordinator