Engineering semiconductor nanowires for photodetection: From visible to terahertz
III-V semiconductor nanowires combine the properties of III-V materials with the unique advantages of the nanowire geometry, allowing efficient room temperature photodetection across a wide range of photon energies, from a few eV down to meV. For example, due to their nanoscale size, these show great promise as sub-wavelength terahertz (THz) detectors for near-field imaging or detecting elements within a highly integrated on-chip THz spectrometer. We discuss recent advances in engineering a...[Show more]
|Collections||ANU Research Publications|
|Source:||Proceedings of SPIE - The International Society for Optical Engineering|
|Access Rights:||Open Access|
|01_Joyce_Engineering_semiconductor_2018.pdf||905.09 kB||Adobe PDF|
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