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Impurity Gettering by Atomic-Layer-Deposited Aluminium Oxide Films on Silicon at Contact Firing Temperatures

Liu, AnYao; Macdonald, Daniel


Aluminium oxide (Al2O3) thin films deposited on silicon surfaces, synthesised by plasma‐assisted atomic layer deposition, are recently reported to possess impurity gettering effects for the silicon wafer bulk during annealing at 425 °C, a typical temperature used for activating the surface passivation quality of the Al2O3 films. This paper investigates the gettering effects of Al2O3 films at higher temperatures of 700–900 °C, which are commonly used for contact firing in silicon solar cell...[Show more]

CollectionsANU Research Publications
Date published: 2017-12-28
Type: Journal article
Source: Physica Status Solidi: Rapid Research Letters
DOI: 10.1002/pssr.201700430


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