Reactive ion etching of dielectrics and silicon for photovoltaics
This paper investigates the reactive ion etching of SiO2, Si3N4, and Si using CHF3/O2 plasma. In particular, we have characterized the time and rf power dependence of the carrier lifetimes in n- and p-type FZ Si. The time dependence of reactive ion etching (RIE) at different rf powers provide insight into the two competing processes of damage accumulation and damage removal in the near-surface region of the Si during plasma etching. The carrier lifetime, measured using the quasi-steady-state...[Show more]
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|Source:||Progress in Photovoltaics: Research and Applications|
|01_Deenapanray_Reactive_ion_etching_of_2006.pdf||277.8 kB||Adobe PDF||Request a copy|
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