Jin, Hao; Weber, Klaus; Zhang, Chun
Measurements of the excess carrier lifetime of diffused and undiffused, thermally oxidized silicon samples are used to show that the presence of a phosphorus diffusion results in a modification of the interface defect properties, resulting in significantly higher surface recombination velocity compared to undiffused samples. In addition, for undiffused samples, positive and negative charges are demonstrated to be equally effective at passivating the silicon surface. Both results hold for (100)...[Show more]
Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.