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Effect of Phosphorus Diffusion to the Recombination at the Si-SiO2 Interface

Jin, Hao; Weber, Klaus; Zhang, Chun


Measurements of the excess carrier lifetime of diffused and undiffused, thermally oxidized silicon samples are used to show that the presence of a phosphorus diffusion results in a modification of the interface defect properties, resulting in significantly higher surface recombination velocity compared to undiffused samples. In addition, for undiffused samples, positive and negative charges are demonstrated to be equally effective at passivating the silicon surface. Both results hold for (100)...[Show more]

CollectionsANU Research Publications
Date published: 2009
Type: Journal article
Source: Progress in Photovoltaics: Research and Applications
DOI: 10.1002/pip.870


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