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Formation of quantum emitter arrays in hexagonal Boron Nitride at room temperature

Proscia, Nicholas V; Shoton, Zav; Jayakumar, Harishankar; Reddy, Prithvi; Dollar, Michael; Doherty, Marcus; Alkauskas, Audrius; Meriles, Carlos A; Menon, Vinod M.

Description

Room temperature quantum emitter arrays are created in hexagonal Boron Nitride (hBN) by deterministic activation via strain engineering on a nanopillar substrate. Emitters are localized at pillar edges where the hBN film undergoes maximum strain.

CollectionsANU Research Publications
Date published: 2018
Type: Conference paper
URI: http://hdl.handle.net/1885/198092
Source: 2018 Conference on Lasers and Electro-Optics, CLEO 2018 - Proceedings

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