Radial Growth Evolution of InGaAs/InP Multi Quantum-Well Nanowires Grown by Selective-Area Metal Organic Vapor-Phase Epitaxy
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Yang, Inseok; Zhang, Zu; Zheng, Changlin; Gao, Qian; Li, Ziyuan
; Li, Li (Lily); Lockrey, Mark
; Nguyen, Hieu
; Caroff, Philippe; Etheridge, Joanne; Tan, Hark Hoe
; Jagadish, Chennupati
; Wong-Leung, Jennifer
; Fu, Lan
Description
III–V semiconductor multi-quantum-well nanowires (MQW NWs) via selective-area epitaxy (SAE) is of great importance for the development of nanoscale light-emitting devices for applications such as optical communication, silicon photonics, and quantum computing. To achieve highly efficient light-emitting devices, not only the high-quality materials but also a deep understanding of their growth mechanisms and material properties (structural, optical, and electrical) are extremely critical. In...[Show more]
Collections | ANU Research Publications |
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Date published: | 2018 |
Type: | Journal article |
URI: | http://hdl.handle.net/1885/195560 |
Source: | ACS Nano |
DOI: | 10.1021/acsnano.8b05771 |
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01_Yang_Radial_Growth_Evolution_of_2018.pdf | 7.03 MB | Adobe PDF | Request a copy |
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