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Radial Growth Evolution of InGaAs/InP Multi Quantum-Well Nanowires Grown by Selective-Area Metal Organic Vapor-Phase Epitaxy

Yang, Inseok; Zhang, Zu; Zheng, Changlin; Gao, Qian; Li, Ziyuan; Li, Li (Lily); Lockrey, Mark; Nguyen, Hieu; Caroff, Philippe; Etheridge, Joanne; Tan, Hark Hoe; Jagadish, Chennupati; Wong-Leung, Jennifer; Fu, Lan

Description

III–V semiconductor multi-quantum-well nanowires (MQW NWs) via selective-area epitaxy (SAE) is of great importance for the development of nanoscale light-emitting devices for applications such as optical communication, silicon photonics, and quantum computing. To achieve highly efficient light-emitting devices, not only the high-quality materials but also a deep understanding of their growth mechanisms and material properties (structural, optical, and electrical) are extremely critical. In...[Show more]

CollectionsANU Research Publications
Date published: 2018
Type: Journal article
URI: http://hdl.handle.net/1885/195560
Source: ACS Nano
DOI: 10.1021/acsnano.8b05771

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