Effect of boron on formation of interstitial-related luminescence centres in ion implanted silicon
The presence of boron in silicon has been shown to have a deleterious effect on the luminescence of interstitial-related centres, particularly the W-centre which is often observed after ion implantation and a low temperature anneal. Competition between silicon-interstitial and boron-interstitial centre formation is considered to be a possible mechanism underlying this dramatic reduction. Previous work on silicon implantation of boron-doped substrates is extended to examine the effect of B...[Show more]
|Collections||ANU Research Publications|
|Source:||Physica Status Solidi A|
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