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Effect of boron on formation of interstitial-related luminescence centres in ion implanted silicon

McCallum, Jeffrey C; Villis, Byron; Johnson, Brett; Stavrias, Nikolas; Burgess, Jack; Charnvanichborikarn, Supakit; Wong-Leung, Yin-Yin (Jennifer); Williams, James; Jagadish, Chennupati

Description

The presence of boron in silicon has been shown to have a deleterious effect on the luminescence of interstitial-related centres, particularly the W-centre which is often observed after ion implantation and a low temperature anneal. Competition between silicon-interstitial and boron-interstitial centre formation is considered to be a possible mechanism underlying this dramatic reduction. Previous work on silicon implantation of boron-doped substrates is extended to examine the effect of B...[Show more]

CollectionsANU Research Publications
Date published: 2011
Type: Journal article
URI: http://hdl.handle.net/1885/19120
Source: Physica Status Solidi A
DOI: 10.1002/pssa.201000380

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