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Increase in External Quantum Efficiency of Encapsulated Silicon Solar Cells from a Luminescent Down-Shifting layer

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McIntosh, Keith; Lau, Gay; Cotsell, James; Hanton, Kathryn; Bätzner , Derk; Bettiol , Fabian; Richards, Bryce

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This paper reports the external quantum efficiency (EQE) of encapsulated screen-printed crystalline silicon solar cells, where the encapsulation includes a layer of luminescent down-shifting (LDS) molecules. At wavelengths less than 400nm, the inclusion of the LDS molecules increases the EQE from near zero to, at most, 40%. The increase in EQE corresponds to a rise in short-circuit current density of 0.37 ± 013 mA/cm2 under the AM15g spectrum.

dc.contributor.authorMcIntosh, Keith
dc.contributor.authorLau, Gay
dc.contributor.authorCotsell, James
dc.contributor.authorHanton, Kathryn
dc.contributor.authorBätzner , Derk
dc.contributor.authorBettiol , Fabian
dc.contributor.authorRichards, Bryce
dc.date.accessioned2015-12-07T22:18:58Z
dc.identifier.issn1062-7995
dc.identifier.urihttp://hdl.handle.net/1885/19095
dc.description.abstractThis paper reports the external quantum efficiency (EQE) of encapsulated screen-printed crystalline silicon solar cells, where the encapsulation includes a layer of luminescent down-shifting (LDS) molecules. At wavelengths less than 400nm, the inclusion of the LDS molecules increases the EQE from near zero to, at most, 40%. The increase in EQE corresponds to a rise in short-circuit current density of 0.37 ± 013 mA/cm2 under the AM15g spectrum.
dc.publisherJohn Wiley & Sons Inc
dc.sourceProgress in Photovoltaics: Research and Applications
dc.subjectKeywords: At-wavelength; Crystalline silicon solar cells; Down shifting; External quantum efficiency; Modules; Screen-printed; Ladder networks; Light; Luminescence; Photovoltaic cells; Semiconductor quantum dots; Silicon solar cells; Solar cells; Switching circuits Down shifting; Luminescence; Modules; Optics; Quantum efficiency
dc.titleIncrease in External Quantum Efficiency of Encapsulated Silicon Solar Cells from a Luminescent Down-Shifting layer
dc.typeJournal article
local.description.notesImported from ARIES
local.identifier.citationvolume17
dc.date.issued2008
local.identifier.absfor090699 - Electrical and Electronic Engineering not elsewhere classified
local.identifier.ariespublicationu9606031xPUB6
local.type.statusPublished Version
local.contributor.affiliationMcIntosh, Keith, College of Engineering and Computer Science, ANU
local.contributor.affiliationLau, Gay, College of Engineering and Computer Science, ANU
local.contributor.affiliationCotsell, James, College of Engineering and Computer Science, ANU
local.contributor.affiliationHanton, Kathryn, College of Engineering and Computer Science, ANU
local.contributor.affiliationBätzner , Derk , Institute of Semiconductor Electronics
local.contributor.affiliationBettiol , Fabian, Fluorosolar Systems Ltd
local.contributor.affiliationRichards, Bryce, Heriot-Watt University
local.description.embargo2037-12-31
local.bibliographicCitation.issue3
local.bibliographicCitation.startpage191
local.bibliographicCitation.lastpage197
local.identifier.doi10.1002/pip.867
dc.date.updated2016-02-24T12:11:03Z
local.identifier.scopusID2-s2.0-65549126454
local.identifier.thomsonID000265337900005
CollectionsANU Research Publications

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