Low Surface Recombination Velocity on (100) Silicon by Electrochemically Grown Silicon Dioxide Annealed at Low Temperature
This letter investigates silicon dioxide (SiO2) layers that are electrochemically grown in nitric acid (HNO3) at room temperature. It examines the dependence of surface recombination velocity (SRV), oxide charge, interface states, and oxide thickness on the concentration of HNO3. The results show that an SRV of less than 40 cm/s can be attained after SiO 2 is annealed at 400 °C in oxygen first and then forming gas. This SRV is similar to that attained by the best thermal oxides....[Show more]
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|Source:||IEEE Electron Device Letters|
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