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Low Surface Recombination Velocity on (100) Silicon by Electrochemically Grown Silicon Dioxide Annealed at Low Temperature

Grant, Nicholas; McIntosh, Keith

Description

This letter investigates silicon dioxide (SiO2) layers that are electrochemically grown in nitric acid (HNO3) at room temperature. It examines the dependence of surface recombination velocity (SRV), oxide charge, interface states, and oxide thickness on the concentration of HNO3. The results show that an SRV of less than 40 cm/s can be attained after SiO 2 is annealed at 400 °C in oxygen first and then forming gas. This SRV is similar to that attained by the best thermal oxides....[Show more]

CollectionsANU Research Publications
Date published: 2010
Type: Journal article
URI: http://hdl.handle.net/1885/19008
Source: IEEE Electron Device Letters
DOI: 10.1109/LED.2010.2052780

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