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Effect of boron on interstitial-related luminescence centers in silicon

Charnvanichborikarn, Supakit; Villis, Byron; Johnson, Brett; Wong-Leung, Yin-Yin (Jennifer); McCallum, Jeffrey C; Williams, James; Jagadish, Chennupati

Description

Photoluminescence measurements have been used to investigate the optically active defect centers formed by silicon implantation and a subsequent anneal at 275, 400, or 525°C. The presence of boron in p-type silicon is found to produce deleterious effects

CollectionsANU Research Publications
Date published: 2010
Type: Journal article
URI: http://hdl.handle.net/1885/18846
Source: Applied Physics Letters
DOI: 10.1063/1.3300836

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