Defect Generation at Charge-Passivated Si-SiO2 Interfaces by Ultraviolet Light
-
Altmetric Citations
Black, Lachlan; McIntosh, Keith
Description
The effect of surface charge on defect generation at the Si-SiO2 interface by UV radiation is investigated. The surface charge is deposited by the corona method, and photoconductance and Kelvin probe measurements are used to characterize surface recombination and surface charge density. Both electron injection and defect generation are found to occur for significantly lower photon energies in the presence of a positive surface charge, with evidence that photons with an energy less than 3.66 eV...[Show more]
dc.contributor.author | Black, Lachlan | |
---|---|---|
dc.contributor.author | McIntosh, Keith | |
dc.date.accessioned | 2015-12-07T22:17:46Z | |
dc.identifier.issn | 0018-9383 | |
dc.identifier.uri | http://hdl.handle.net/1885/18731 | |
dc.description.abstract | The effect of surface charge on defect generation at the Si-SiO2 interface by UV radiation is investigated. The surface charge is deposited by the corona method, and photoconductance and Kelvin probe measurements are used to characterize surface recombination and surface charge density. Both electron injection and defect generation are found to occur for significantly lower photon energies in the presence of a positive surface charge, with evidence that photons with an energy less than 3.66 eV are capable of generating interface defects. In contrast to previous studies on MOS structures, the majority of the defect generation is found to occur at oxide fields less than ∼1 MV/cm. A possible explanation is discussed in terms of the hydrogen-release model of the defect generation. These results have significant relevance to high-efficiency silicon solar cells. | |
dc.publisher | Institute of Electrical and Electronics Engineers (IEEE Inc) | |
dc.source | IEEE Transactions on Electron Devices | |
dc.subject | Keywords: Defect generation; High efficiency; Interface defects; Kelvin Probe measurements; MOS structure; Photoconductance; Photon energy; Positive surface charge; Semiconductor device radiation effects; Semiconductor-insulator interface; Surface recombinations; U Photovoltaic cell radiation effects; semiconductor device radiation effects; semiconductorinsulator interfaces; UV radiation effects | |
dc.title | Defect Generation at Charge-Passivated Si-SiO2 Interfaces by Ultraviolet Light | |
dc.type | Journal article | |
local.description.notes | Imported from ARIES | |
local.identifier.citationvolume | 57 | |
dc.date.issued | 2010 | |
local.identifier.absfor | 090605 - Photodetectors, Optical Sensors and Solar Cells | |
local.identifier.ariespublication | u4963866xPUB5 | |
local.type.status | Published Version | |
local.contributor.affiliation | Black, Lachlan, College of Engineering and Computer Science, ANU | |
local.contributor.affiliation | McIntosh, Keith, College of Engineering and Computer Science, ANU | |
local.description.embargo | 2037-12-31 | |
local.bibliographicCitation.issue | 8 | |
local.bibliographicCitation.startpage | 9 | |
local.identifier.doi | 10.1109/TED.2010.2051199 | |
local.identifier.absseo | 850504 - Solar-Photovoltaic Energy | |
dc.date.updated | 2016-02-24T11:30:49Z | |
local.identifier.scopusID | 2-s2.0-77955145126 | |
local.identifier.thomsonID | 000283382800035 | |
Collections | ANU Research Publications |
Download
File | Description | Size | Format | Image |
---|---|---|---|---|
01_Black_Defect_Generation_at_2010.pdf | 447.25 kB | Adobe PDF | Request a copy |
Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.
Updated: 17 November 2022/ Responsible Officer: University Librarian/ Page Contact: Library Systems & Web Coordinator