Defect Generation at Charge-Passivated Si-SiO2 Interfaces by Ultraviolet Light
The effect of surface charge on defect generation at the Si-SiO2 interface by UV radiation is investigated. The surface charge is deposited by the corona method, and photoconductance and Kelvin probe measurements are used to characterize surface recombination and surface charge density. Both electron injection and defect generation are found to occur for significantly lower photon energies in the presence of a positive surface charge, with evidence that photons with an energy less than 3.66 eV...[Show more]
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|Source:||IEEE Transactions on Electron Devices|
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