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Defect Generation at Charge-Passivated Si-SiO2 Interfaces by Ultraviolet Light

Black, Lachlan; McIntosh, Keith


The effect of surface charge on defect generation at the Si-SiO2 interface by UV radiation is investigated. The surface charge is deposited by the corona method, and photoconductance and Kelvin probe measurements are used to characterize surface recombination and surface charge density. Both electron injection and defect generation are found to occur for significantly lower photon energies in the presence of a positive surface charge, with evidence that photons with an energy less than 3.66 eV...[Show more]

CollectionsANU Research Publications
Date published: 2010
Type: Journal article
Source: IEEE Transactions on Electron Devices
DOI: 10.1109/TED.2010.2051199


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