FTIR analysis of microwave-excited PECVD silicon nitride layers
This paper presents infrared absorption (FTIR) measurements of SiN layers and correlates them to their ability to passivate silicon wafer surfaces. The best passivation was obtained for films having a nitrogen to silicon atomic composition in the proximity of N/Si=1.2, together with a high concentration of Si-N bonds (approximately 1×1023 cm-3) and a refractive index in the vicinity of n=2. The total hydrogen concentration in these films remained practically unchanged after a high temperature...[Show more]
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|Source:||Proceedings of the World Conference on Photovoltaic Energy Conversion 2006|
|01_Cuevas_FTIR_analysis_of_2006.pdf||183.09 kB||Adobe PDF||Request a copy|
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