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FTIR analysis of microwave-excited PECVD silicon nitride layers

Cuevas, Andres; Chen, Florence; Tan, Jason; Mackel, Helmut; Winderbaum, Saul; Roth, Kristin

Description

This paper presents infrared absorption (FTIR) measurements of SiN layers and correlates them to their ability to passivate silicon wafer surfaces. The best passivation was obtained for films having a nitrogen to silicon atomic composition in the proximity of N/Si=1.2, together with a high concentration of Si-N bonds (approximately 1×1023 cm-3) and a refractive index in the vicinity of n=2. The total hydrogen concentration in these films remained practically unchanged after a high temperature...[Show more]

CollectionsANU Research Publications
Date published: 2006
Type: Conference paper
URI: http://hdl.handle.net/1885/18655
Source: Proceedings of the World Conference on Photovoltaic Energy Conversion 2006
DOI: 10.1109/WCPEC.2006.279365

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