Cuevas, Andres; Chen, Florence; Tan, Jason; Mackel, Helmut; Winderbaum, Saul; Roth, Kristin
This paper presents infrared absorption (FTIR) measurements of SiN layers and correlates them to their ability to passivate silicon wafer surfaces. The best passivation was obtained for films having a nitrogen to silicon atomic composition in the proximity of N/Si=1.2, together with a high concentration of Si-N bonds (approximately 1×1023 cm-3) and a refractive index in the vicinity of n=2. The total hydrogen concentration in these films remained practically unchanged after a high temperature...[Show more]
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