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Formation of Precipitates in Heavily Boron Doped 4H-SiC

Linnarsson, M K; Janson, M S; Nordell, N; Wong-Leung, Yin-Yin (Jennifer); Schoner, A


Secondary ion mass spectrometry (SIMS) and transmission electron microscopy (TEM) are utilized to study precipitation and the solubility of B in 4H-SiC epitaxial layers super saturated with B. Heat treatments are performed in Ar atmosphere in an rf-heated furnace at temperatures between 1700 and 2000 °C. SIMS ion images, and TEM micrographs reveal the formation of two types of precipitates where the larger, more thermally stable one is suggested to be B4C. The boron solubility is determined...[Show more]

CollectionsANU Research Publications
Date published: 2006
Type: Journal article
Source: Applied Surface Science
DOI: 10.1016/j.apsusc.2005.12.024


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