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Efficient point defect engineered si light-emitting diode at 1.218 μm

Bao, Jiming; Tabbal, Malek; Kim, Taegon; Charnvanichborikarn, Supakit; Williams, James; Aziz, Michael; Capasso, Federico

Description

We have demonstrated a Si LED with an internal quantum efficiency ∼ 10 % using a novel approach to enhance light emission based on point defect engineering, which uses state-of-the art technology.

CollectionsANU Research Publications
Date published: 2007
Type: Conference paper
URI: http://hdl.handle.net/1885/18571
Source: CLEO/QELS 07 Technical Digest CD-ROM
DOI: 10.1109/QELS.2007.4431330

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