Efficient point defect engineered si light-emitting diode at 1.218 μm
We have demonstrated a Si LED with an internal quantum efficiency ∼ 10 % using a novel approach to enhance light emission based on point defect engineering, which uses state-of-the art technology.
|Collections||ANU Research Publications|
|Source:||CLEO/QELS 07 Technical Digest CD-ROM|
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