Selective-Area Epitaxial Growth of InGaAs/InP Quantum Well Nanowires for Light Emitting Device Applications
The fourth industrial revolution features hyper-connectivity, which means the creation and transport of a huge amount of data that have never been dealt with previously. For a smooth transport of massive data, optical interconnect technology for fast broadband communications between chips as well as boards are required. III-V semiconductor nanowires are considered as a promising candidate for the integrated light emitting devices for Si-based integrated photonics owing to their promise for...[Show more]
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