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The formation, migration, agglomeration and annealing of vacancy-type defects in self-implanted Si

Coleman, P. G.; Harding, Ruth E; Davies, G; Tan, J; Wong-Leung, Yin-Yin (Jennifer)

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The evolution of vacancy-type defects has been studied by variable-energy positron annihilation spectroscopy (VEPAS) in samples of high-quality FZ p-type (001) silicon wafers implanted with 4 MeV Si2+ ions at room temperature to doses of 1012 -1014cm-2. The average vacancy concentration increases as (ion dose)0.70±0.06. Progressive isochronal annealing measurements show that open-volume point defects (having a VEPAS signature close to that for divacancies) anneal between 500-600°C. VEPAS with...[Show more]

dc.contributor.authorColeman, P. G.
dc.contributor.authorHarding, Ruth E
dc.contributor.authorDavies, G
dc.contributor.authorTan, J
dc.contributor.authorWong-Leung, Yin-Yin (Jennifer)
dc.date.accessioned2015-12-07T22:16:51Z
dc.identifier.issn0022-2461
dc.identifier.urihttp://hdl.handle.net/1885/18233
dc.description.abstractThe evolution of vacancy-type defects has been studied by variable-energy positron annihilation spectroscopy (VEPAS) in samples of high-quality FZ p-type (001) silicon wafers implanted with 4 MeV Si2+ ions at room temperature to doses of 1012 -1014cm-2. The average vacancy concentration increases as (ion dose)0.70±0.06. Progressive isochronal annealing measurements show that open-volume point defects (having a VEPAS signature close to that for divacancies) anneal between 500-600°C. VEPAS with enhanced depth sensitivity (via progressive etching) verified that single 30 min anneals to 550 and 600°C lead to the formation of buried clusters VN with an average N of 3.5 lying between depths of 2.2 and 3.6 μm (both ± 2 μm), close to the peak of vacancy damage just shallower than the ion range predicted by simulation. The concentration of these clusters increases as (ion dose)2.6±0.1. Single anneals to higher temperatures reduce all open-volume point defect concentrations to below the limit detectable by VEPAS.
dc.publisherKluwer Academic Publishers
dc.sourceJournal of Materials Science
dc.subjectKeywords: Defect concentration; Variable-energy positron annihilation spectroscopy; Annealing; Defects; Etching; Ion implantation; Positron annihilation spectroscopy; Silicon wafers
dc.titleThe formation, migration, agglomeration and annealing of vacancy-type defects in self-implanted Si
dc.typeJournal article
local.description.notesImported from ARIES
local.identifier.citationvolume18
dc.date.issued2007
local.identifier.absfor090699 - Electrical and Electronic Engineering not elsewhere classified
local.identifier.absfor020405 - Soft Condensed Matter
local.identifier.absfor091299 - Materials Engineering not elsewhere classified
local.identifier.ariespublicationu9607716xPUB3
local.type.statusPublished Version
local.contributor.affiliationColeman, P G , University of Bath
local.contributor.affiliationHarding, Ruth E, King's College London
local.contributor.affiliationDavies, G, King's College London
local.contributor.affiliationTan, J, King's College London
local.contributor.affiliationWong-Leung, Yin-Yin (Jennifer), College of Physical and Mathematical Sciences, ANU
local.description.embargo2037-12-31
local.bibliographicCitation.startpage695
local.bibliographicCitation.lastpage700
local.identifier.doi10.1007/s10854-006-9080-9
local.identifier.absseo861603 - Integrated Circuits and Devices
local.identifier.absseo970102 - Expanding Knowledge in the Physical Sciences
dc.date.updated2015-12-07T07:57:51Z
local.identifier.scopusID2-s2.0-34247869626
CollectionsANU Research Publications

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