The formation, migration, agglomeration and annealing of vacancy-type defects in self-implanted Si
The evolution of vacancy-type defects has been studied by variable-energy positron annihilation spectroscopy (VEPAS) in samples of high-quality FZ p-type (001) silicon wafers implanted with 4 MeV Si2+ ions at room temperature to doses of 1012 -1014cm-2. The average vacancy concentration increases as (ion dose)0.70±0.06. Progressive isochronal annealing measurements show that open-volume point defects (having a VEPAS signature close to that for divacancies) anneal between 500-600°C. VEPAS with...[Show more]
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|Source:||Journal of Materials Science|
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