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Comparison of proton and phosphorous ion implantation-induced intermixing of InAs/InP quantum dots

Barik, Satyanarayan; Tan, Hoe Hark; Jagadish, Chennupati

Description

We report and compare proton and phosphorous ion implantation-induced intermixing of InAs/InP quantum dots (QDs). After ion implantation at 20-300°C, the QDs are rapid thermally annealed at 850°C for 30 s. Proton implantation induces less energy shift t

CollectionsANU Research Publications
Date published: 2007
Type: Journal article
URI: http://hdl.handle.net/1885/18199
Source: Nanotechnology
DOI: 10.1088/0957-4484/18/17/175305

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