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Application of junction capacitance measurements to the characterization of solar cells

Recart, Federico; Cuevas, Andres

Description

The quasi-static capacitance-voltage (C-V) technique measures the dependence of junction capacitance on the bias voltage by applying a slow, reverse-bias voltage ramp to the solar cell in the dark, using simple circuitry. The resulting C-V curves contain

CollectionsANU Research Publications
Date published: 2006
Type: Journal article
URI: http://hdl.handle.net/1885/18040
Source: IEEE Transactions on Electron Devices
DOI: 10.1109/TED.2006.870846

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