Application of junction capacitance measurements to the characterization of solar cells
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Recart, Federico; Cuevas, Andres
Description
The quasi-static capacitance-voltage (C-V) technique measures the dependence of junction capacitance on the bias voltage by applying a slow, reverse-bias voltage ramp to the solar cell in the dark, using simple circuitry. The resulting C-V curves contain
Collections | ANU Research Publications |
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Date published: | 2006 |
Type: | Journal article |
URI: | http://hdl.handle.net/1885/18040 |
Source: | IEEE Transactions on Electron Devices |
DOI: | 10.1109/TED.2006.870846 |
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01_Recart_Application_of_junction_2006.pdf | 366.41 kB | Adobe PDF | Request a copy |
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