Formation of Si-nanocrystals in SiO2 via ion implantation and rapid thermal processing
We present a combined analysis using cross-sectional transmission electron microscopy (X-TEM) and Raman spectroscopy to study the early formation dynamics of Si-nanocrystals, formed in SiO2 thin films after Si+ implantation and rapid thermal processing (RTP). We obtained values for the diffusion coefficient of Si in thermally grown SiO2 and the activation energy to precipitate formation in the first 100 seconds of high temperature annealing. These values indicate that the formation of...[Show more]
|Collections||ANU Research Publications|
|Source:||Silicon Photonics V: Proceedings of the Society of Photo-optical Instrumentation Engineers|
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