TEMPERATURE DEPENDENT ELECTRON AND HOLE CAPTURE CROSS SECTIONS OF IRON-CONTAMINATED BORON-DOPED SILICON
Temperature controlled photoconductance is applied to measure the electron and hole capture cross sections of interstitial iron and iron-boron pairs in crystalline silicon. The injection-dependent lifetime was measured before and after light soaking over
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|Source:||Proceedings of IEEE Photovoltaic Specialists Conference (PVSC 2009)|
|01_Paudyal_TEMPERATURE_DEPENDENT_ELECTRON_2009.pdf||500.33 kB||Adobe PDF||Request a copy|
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