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TEMPERATURE DEPENDENT ELECTRON AND HOLE CAPTURE CROSS SECTIONS OF IRON-CONTAMINATED BORON-DOPED SILICON

Paudyal, Bijaya; McIntosh, Keith; MacDonald, Daniel

Description

Temperature controlled photoconductance is applied to measure the electron and hole capture cross sections of interstitial iron and iron-boron pairs in crystalline silicon. The injection-dependent lifetime was measured before and after light soaking over

CollectionsANU Research Publications
Date published: 2009
Type: Conference paper
URI: http://hdl.handle.net/1885/18021
Source: Proceedings of IEEE Photovoltaic Specialists Conference (PVSC 2009)
DOI: 10.1109/PVSC.2009.5411380

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