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Characterization of defects created in Cz and epitaxial Si doped with Ga or B using Laplace-DLTS

Deenapanray, Prakash; Nyamhere, Cloud; Auret, Francois D; Farlow, F C


We have measured the electrical and annealing properties of defects created in epitaxial and Czochralski-grown Si doped with either B or Ga by electron irradiation using both conventional and Laplace deep level transient spectroscopy (L)-DLTS. With L-DLTS, we have been able to resolve several defects that cannot be resolved using conventional DLTS. L-DLTS provides a new avenue to study defect introduction rates and annealing kinetics in B- and Ga-doped Si. The isochronal annealing behaviour of...[Show more]

CollectionsANU Research Publications
Date published: 2006
Type: Journal article
Source: Physica B
DOI: 10.1016/j.physb.2005.12.043


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