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Radiation effects on GaAs/AlGaAs core/shell ensemble nanowires and nanowire infrared photodetectors

Li, Fajun; Li, Ziyuan; Tan, Liying; Zhou, Yanping; Ma, Jing; Lysevych, Mykhaylo; Fu, Lan; Tan, Hark Hoe; Jagadish, Chennupati

Description

With the recent advances in nanowire (NW) growth and fabrication, there has been rapid development and application of GaAs NWs in optoelectronics. It is also of importance to study the radiation tolerance of optoelectronic nano-devices for atomic energy and space-based applications. Here, photoluminescence (PL) and time-resolved photoluminescence measurements were carried out on GaAs/AlGaAs core/shell NWs at room temperature before and after 1 MeV proton irradiation with fluences ranging from...[Show more]

CollectionsANU Research Publications
Date published: 2017
Type: Journal article
URI: http://hdl.handle.net/1885/176964
Source: Nanotechnology
DOI: 10.1088/1361-6528/aa5bad

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