Effective surface passivation of crystalline silicon by rf sputtered aluminum oxide
In recent years, excellent surface passivation has been achieved on both p-type and n-type surfaces of silicon wafers and solar cells using aluminum oxide deposited by plasmaassisted atomic layer deposition. However, alternative deposition methods may offer practical advantages for large-scale manufacturing of solar cells. In this letter we show that radiofrequency magnetron sputtering is capable of depositing negatively-charged aluminum oxide and achieving good surface passivation both on...[Show more]
|Collections||ANU Research Publications|
|Source:||Physica Status Solidi: Rapid Research Letters|
|01_Li_Effective_surface_passivation_2009.pdf||157.69 kB||Adobe PDF||Request a copy|
Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.