Araujo, Leandro; Kluth, Patrick; Azevedo, G de M; Ridgway, Mark C
Extended x-ray absorption fine structure (EXAFS) spectroscopy was applied to probe the vibrational properties of bulk crystalline Ge (c-Ge) and Ge nanocrystals (Ge NCs) of 4.4 nm mean diameter produced by ion implantation in Si O2 followed by thermal annealing. EXAFS measurements around the Ge K edge were carried out in the temperature range from 8 to 300 K at beam line 10-2 of the Stanford Synchrotron Radiation Laboratory (SSRL). Original information about thermal and static disorder, thermal...[Show more]
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