Vibrational Properties of Ge Nanocrystals determined by EXAFS
Extended x-ray absorption fine structure (EXAFS) spectroscopy was applied to probe the vibrational properties of bulk crystalline Ge (c-Ge) and Ge nanocrystals (Ge NCs) of 4.4 nm mean diameter produced by ion implantation in Si O2 followed by thermal annealing. EXAFS measurements around the Ge K edge were carried out in the temperature range from 8 to 300 K at beam line 10-2 of the Stanford Synchrotron Radiation Laboratory (SSRL). Original information about thermal and static disorder, thermal...[Show more]
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|Source:||Physical Review B: Condensed Matter and Materials|
|01_Araujo_Vibrational_Properties_of_Ge_2006.pdf||555.9 kB||Adobe PDF||Request a copy|
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